emd12 / UMD12N z f eatu r es 1) both the dt a144e and dt c144e in a emt or umt p a ckage. z equiv a le nt c i rc uit (4) (5) (6) (1) (2) (3) r 1 dtr2 dtr1 r 2 r 2 r 1 r 1 = 47k ? r 2 = 47k ? z packag e, markin g , an d p ackag in g sp ecificatio n s type emd12 emt6 d12 t2r 8000 UMD12N umt6 d12 tr 3000 package marking code basic ordering unit (pieces) z a b solute maximum ratings (t a= 25 c) parameter ? 1 120mw per element must not be exceeded. pnp type negative symbols have been omitted symbol v cc v in i o i c pd tj tstg limits 50 40 ? 10 100 30 150(total) 150 ? 55 ~ + 150 unit v v ma ma mw ? 1 c c supply voltage input voltage output current power dissipation junction temperature storage temperature z ex te rna l dime ns ions (unit s : mm) each lead has same dimensions rohm : emt6 emd12 UMD12N each lead has same dimensions rohm : umt6 eiaj : sc-88 0~0.1 ( 6 ) 2.0 1.3 0.9 0.15 0.7 0.1min. 2.1 0.65 0.2 1.25 ( 1 ) 0.65 ( 4 ) ( 3 ) ( 2 ) ( 5 ) 0.22 1.2 1.6 ( 1 ) ( 2 ) ( 5 ) ( 3 ) ( 6 ) ( 4 ) 0.13 0.5 0.5 0.5 1.0 1.6 z electrical ch aracteristics (t a= 25 c) parameter symbol min. typ. max. unit conditions input resistance v i (off) v i (on) v o (on) i i i o (off) g i f t r 1 ? 3 ? ? ? 68 32.9 0.8 ? ? 0.1 ? ? ? 47 ? ? 1 0.5 ? 0.3 0.18 0.5 ? 61.1 1.2 v v v ma a ? mhz k ? ? r 2 / r 1 ? 250 ? ? v cc = 5/ ? 5v, i o = 100/ ? 100 a v o = 0.3/ ? 0.3v, i o = 2/ ? 2ma i o = 10/ ? 10ma, i i = 0.5/ ? 0.5ma v i = 5/ ? 5v v cc = 50/ ? 50v, v i = 0v i o = 5/ ? 5ma, v o = 5/ ? 5v v ce = 10/ ? 10v, i e =? 5/5ma, f = 100mhz ? transition frequency of the device. pnp type negative symbols have been omitted input voltage output voltage input current output current dc current gain transition frequency resistance ratio 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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